Topology Institute points out that compared with the current mainstream silicon wafer (Si), third-generation semiconductor materials SiC and GaN, inaddition to their high voltage resistance, they also have the advantages of high temperature resistance and high frequency operation respectively. Not only can the chip area be greatly reduced, but also the design of peripheral circuits can be simplified, and the volume of modules, system peripheral components and cooling systems can be reduced.In addition to the light vehicle design, the characteristics of the third generation semiconductor with low on-resistance and low switching loss can significantly reduce the energy conversion loss while the vehicle is running, both of which are of considerable help to enhance the endurance of electric vehicles.
Therefore, SiC and GaN power components technology and market development, and the development of electric vehicles inseparable.
However, SiC materials are still in the phase of verification and import, and they are only used in the field of motor vehicles at the present stage. Therefore, the area of the global automotive power components at the present stage is less than 1/1000 using the SiC solution.
On the other hand, at present, the GaN power components in the market are made of GaN-on-SiC and GaN-on-Si wafers. Among them, GaN-on-SiC has advantages in heat dissipation and is quite suitable for high temperature and high frequency operating environments. Therefore, 5G base stations have high visibility in applications. It is expected that SiC substrates will enter high-speed growth period in the next five years, driven by vehicle factory verification and 5G commercial use in 2020.